| PART |
Description |
Maker |
| AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM（带单片使能
2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
|
Alliance Semiconductor Corporation
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| AS6VA5128-BI AS6VA5128 AS6VA5128-BC |
2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM
2.7V to 3.3V 512K × 8 Intelliwatt low-power CMOS SRAM(2.7V 3.3V 512K × 8 Intelliwatt 低功CMOS 静态RAM)
2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM 2.7V.3V12k × 8 Intelliwatt低功耗CMOS SRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Alliance Semiconductor Corporation
|
| AT60142E-DC15SMV AT60142E-DC15SSB AT60142E-DC20M A |
IND 3.3UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF
SWITCH
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 15 ns, DFP36
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, DFP36
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| V62C1161024LL-120T |
Ultra Low Power 64K x 16 CMOS SRAM 超低功4K的16 CMOS SRAM
|
Mosel Vitelic, Corp.
|
| HY62U8100B-E HY62U8100B-I HY62U8100BLLG HY62U8100B |
Low Power Slow SRAM - 1Mb
128K x8 bit 3.0V Low Power CMOS slow SRAM
x8|3V|70/85/100|Low Power Slow SRAM - 1M
|
Hynix Semiconductor
|
| N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
| UT62L12816 UT62L12816BS-55LI UT62L12816BS-55LLI UT |
128K x 16 BIT LOW POWER CMOS SRAM 128K的16位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| BS616UV1010EIP10 BS616UV1010DIG10 BS616UV1010AI10 |
Ultra Low Power CMOS SRAM 64K X 16 bit 超低功耗CMOS SRAM 64K的16
|
BRILLIANCE SEMICONDUCTOR, INC.
|
| BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable
Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| UT6264CPC- UT6264CSC- UT6264CSC-70LL UT6264CSC-70L |
8K X 8 BIT LOW POWER CMOS SRAM 8K的8位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
N.A.
ETC[ETC]
UTRON Technology
|
